Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-07
2006-11-07
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21508
Reexamination Certificate
active
07132356
ABSTRACT:
A method of forming bumped substrates with protuberances for inverted or flip-connection bonding of electronic devices including semiconductor devices, integrated circuits, and/or application specific integrated circuits and electromechanical devices. The substrates are high temperature insulating materials provided with a conductive pattern. The conductive pattern has contact areas corresponding to the input/output (I/O) pads of the electronic device. A metal is applied over the contact areas, and the temperature is raised above the melting point of the metal causing the metal to melt and draw back into a convex protuberance over the contact areas. The convex protuberances are suitable for connecting to the electronic devices by conductive adhesive bonding or metallurgically bonding such as thermocompression, thermosonic or ultrasonic bonding.
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Geyer Scott B.
McCormack John F
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