Interconnection for flip-chip using lead-free solders and...

Details Interconnection for flip-chip using lead-free solders and... Interconnection for flip-chip using lead-free solders and...

2011-04-26

2011-04-26

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S614000, C257S779000, C257S781000, C257SE23021, C257SE21509

Reexamination Certificate

active

07932169

ABSTRACT:
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

REFERENCES:
patent: 7410833 (2008-08-01), Fogel et al.
patent: 2005/0224966 (2005-10-01), Fogel et al.

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