Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1993-09-20
1995-04-11
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257698, 257786, H01L 2984
Patent
active
054061083
ABSTRACT:
A semiconductor device such as a semiconductor acceleration sensor of an electrostatic capacity type and a method of manufacturing the same are disclosed, wherein a silicon layer is bonded to first and second glass layers by means of an anodic bonding process in such a manner as to be positioned between the first and second glass layers. The first glass layer has an overhung portion protruded from an edge of the second glass layer. At least an interconnection is formed between the silicon layer and the first glass layer and has a bonding pad positioned on the inner surface of the overhung portion of the first glass layer. Before the anodic bonding process, an anodic-bonding-inhibition-layer such as aluminum layer is positioned between a second glass wafer forming the second glass layer and a silicon wafer forming the silicon layer, and faces to a predetermined portion of a first glass wafer forming the first glass layer. The predetermined portion of the first glass wafer is to be the overhung portion of the first glass layer. During a dicing process after the anodic bonding process, the second glass wafer is cut along the configuration of the anodic-bonding-inhibition-layer, thereby removing an unnecessary portion of the second glass wafer facing to the overhung portion of the first glass layer from the remaining portions of the second glass wafer.
REFERENCES:
patent: 4732647 (1988-03-01), Aine
patent: 4744248 (1988-05-01), Stewart
Bowers Courtney A.
James Andrew J.
Sumitomo Electric Industries Ltd.
LandOfFree
Interconnection construction of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Interconnection construction of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interconnection construction of semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1540389