Interconnecting structure for semiconductor integrated circuits

Details Interconnecting structure for semiconductor integrated circuits Interconnecting structure for semiconductor integrated circuits

1995-10-05

2000-05-23

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257532, H01L 2329, H01L 2352, H01L 2940

Patent

active

060668954

ABSTRACT:
An interconnecting structure for a semiconductor integrated circuit and a method for manufacturing said interconnecting structure. The interconnecting structure comprises a top layer, a bottom layer, and a dielectric isolation layer. The top layer completely covers and encloses the bottom layer. The dielectric isolation layer is disposed between the top layer and the bottom layer. At least one contact opening is formed through the top layer of the structure, thereby exposing a selected region of said bottom layer. A contact is formed on the selected region of the bottom layer.

REFERENCES:
patent: 5037772 (1991-08-01), McDonald
patent: 5420449 (1995-05-01), Oji
Siemens Components 28, Heft 3, 1990, pp. 81-86.

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