Interconnecting conductive layers of memory devices

Details Interconnecting conductive layers of memory devices Interconnecting conductive layers of memory devices

2005-03-01

2005-03-01

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06861697

ABSTRACT:
Apparatus and methods are provided. Field-effect transistors, select gates, and select lines have first and second conductive layers separated by an interlayer dielectric layer. A coductive strap is disposed on either side of the first and second conductive layers. Each strap electrically interconnects the first and second conductive layers.

REFERENCES:
patent: 20040014286 (2004-01-01), Park

Affiliated with

Also associated with

Rating

Interconnecting conductive layers of memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Interconnecting conductive layers of memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interconnecting conductive layers of memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3395281