Interconnecting bit lines in memory devices for multiplexing

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S296000, C257S368000, C257SE27060

Reexamination Certificate

active

07968951

ABSTRACT:
An embodiment of a memory device has a plurality of conductive plugs formed on a semiconductor substrate and a pair of successively adjacent first and second bit lines overlying and in contact with each of the conductive plugs.

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patent: 6429474 (2002-08-01), Gambino et al.
patent: 6665204 (2003-12-01), Takeda
patent: 7312118 (2007-12-01), Kiyotoshi

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