Interconnect substrate, semiconductor device, methods of...

Details Interconnect substrate, semiconductor device, methods of... Interconnect substrate, semiconductor device, methods of...

2008-07-17

2009-06-02

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S123000, C438S652000, C257S676000, C257S700000, C257SE21575, C257SE21627, C257SE21641

Reexamination Certificate

active

07541278

ABSTRACT:
A first conductive layer is formed. An insulating layer is formed so that at least a part of the insulating layer is disposed on the first conductive layer. A second conductive layer is formed so that at least a part of the second conductive layer is disposed on the insulating layer over the first conductive layer. Each of the first and second conductive layers is formed by discharging drops of a solvent containing fine particles of a conductive material. The insulating layer is formed by discharging drops of a solvent containing fine particles of an insulating material.

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