Interconnect structures in a semiconductor device and...

Details Interconnect structures in a semiconductor device and... Interconnect structures in a semiconductor device and...

2006-04-25

2006-04-25

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000, C438S686000, C438S660000, C438S637000, C438S699000, C438S644000, C438S648000, C438S650000, C438S658000, C438S661000, C438S687000, C438S630000, C438S655000, C438S682000

Reexamination Certificate

active

07033930

ABSTRACT:
Processes for fabricating a semiconductor device are described herein. In one aspect of the invention, an exemplary process includes forming an interface layer overlying the device substrate, forming a silver layer overlying the interface layer, annealing the substrate to form an intermetallic layer between the silver layer and the interface layer, the silver layer is in intimate contact with the intermetallic layer, and forming a protection layer overlying the silver layer. Other interconnect structures and processes are also described.

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