Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-03-27
2007-03-27
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S758000
Reexamination Certificate
active
10811186
ABSTRACT:
An interconnect structure with dielectric barrier and fabrication thereof. The interconnect structure includes a semiconductor substrate and a plurality of stacked structures formed thereon, each stacked structure including a conductive line and a conductive plug thereon. A conformal dielectric barrier is formed over the surfaces of the stacked structures and a blanket second dielectric layer is formed over the dielectric barrier to form an inter-metal layer.
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Chen Ying-Tsung
Jang Syun-Ming
Lu Yun-Cheng
Wu Zhen-Cheng
Potter Roy
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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