Interconnect structure with a barrier-redundancy feature

Details Interconnect structure with a barrier-redundancy feature Interconnect structure with a barrier-redundancy feature

2008-03-25

2008-03-25

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S751000, C257SE21320, C257SE21158, C257SE21347, C257SE21475, C257SE21585

Reexamination Certificate

active

07348648

ABSTRACT:
An interconnect structure that includes a barrier-redundancy feature which is capable of avoiding a sudden open circuit after an electromigration (EM) failure as well as a method of forming the same are provided. In accordance with the present invention, the barrier-redundancy feature is located within preselected locations within the interconnect structure including in a wide line region, a thin line region or any combination thereof. The barrier-redundancy feature includes an electrical conductive material located between, and in contact with, a conductive line diffusion barrier of a conductive line and a via diffusion barrier of an overlying via. The presence of the inventive barrier-redundancy feature creates an electrical path between the via diffusion barrier along the sidewalls of the via and the conductive line diffusion barrier along the sidewalls of the conductive line. This electrical path generated by the inventive barrier-redundancy feature can avoid a sudden open circuit resulting from EM failure at the bottom of the via. The presence of the inventive barrier-redundancy feature within an interconnect structure provides sufficient time for chip replacement or system operation.

REFERENCES:
patent: 5264377 (1993-11-01), Chesire et al.
patent: 5514974 (1996-05-01), Bouldin
patent: 5770519 (1998-06-01), Klein et al.
patent: 6096637 (2000-08-01), Sriram et al.
patent: 6147361 (2000-11-01), Lin et al.
patent: 6365503 (2002-04-01), Huang et al.
patent: 6515368 (2003-02-01), Lopatin et al.
patent: 6573606 (2003-06-01), Sambucetti et al.
patent: 6709874 (2004-03-01), Ning
patent: 2002/0072223 (2002-06-01), Gilbert et al.
patent: 2003/0207560 (2003-11-01), Dubin et al.
patent: 2004/0224497 (2004-11-01), Barth
patent: 2005/0101130 (2005-05-01), Lopatin et al.

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