Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-03-25
2008-03-25
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S751000, C257SE21320, C257SE21158, C257SE21347, C257SE21475, C257SE21585
Reexamination Certificate
active
07348648
ABSTRACT:
An interconnect structure that includes a barrier-redundancy feature which is capable of avoiding a sudden open circuit after an electromigration (EM) failure as well as a method of forming the same are provided. In accordance with the present invention, the barrier-redundancy feature is located within preselected locations within the interconnect structure including in a wide line region, a thin line region or any combination thereof. The barrier-redundancy feature includes an electrical conductive material located between, and in contact with, a conductive line diffusion barrier of a conductive line and a via diffusion barrier of an overlying via. The presence of the inventive barrier-redundancy feature creates an electrical path between the via diffusion barrier along the sidewalls of the via and the conductive line diffusion barrier along the sidewalls of the conductive line. This electrical path generated by the inventive barrier-redundancy feature can avoid a sudden open circuit resulting from EM failure at the bottom of the via. The presence of the inventive barrier-redundancy feature within an interconnect structure provides sufficient time for chip replacement or system operation.
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Hsu Louis L.
Yang Chih-Chao
International Business Machines - Corporation
Jaklitsch, Esq. Lisa U.
Nhu David
Scully , Scott, Murphy & Presser, P.C.
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