Interconnect structure using Al.sub.2 Cu for an integrated circu

Details Interconnect structure using Al.sub.2 Cu for an integrated circu Interconnect structure using Al.sub.2 Cu for an integrated circu

1999-05-19

2000-08-29

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438660, 438687, 438688, 438927, H01L 214763

Patent

active

061108197

ABSTRACT:
An interconnect structure and method for an integrated circuit chip for resisting electromigration is described incorporating patterned interconnect layers of Al or Al--Cu and interlayer contact regions or studs of Al.sub.2 Cu between patterned interconnect layers. The invention overcomes the problem of electromigration at high current density in the interconnect structure by providing a continuous path for Cu and/or Al atoms to move in the interconnect structure.

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