Interconnect structure using a Al.sub.2 Cu for an integrated cir

Details Interconnect structure using a Al.sub.2 Cu for an integrated cir Interconnect structure using a Al.sub.2 Cu for an integrated cir

1994-10-31

1996-10-15

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257758, 257763, 257764, 257767, H01L 2348, H01L 2352, H01L 2940

Patent

active

055657079

ABSTRACT:
An interconnect structure and method for an integrated circuit chip for resisting electromigration is described incorporating patterned interconnect layers of Al or Al-Cu and interlayer contact regions or studs of Al.sub.2 Cu between patterned interconnect layers. The invention overcomes the problem of electromigration at high current density in the interconnect structure by providing a continuous path for Cu and/or Al atoms to move in the interconnect structure.

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J. Havas et al., "Self-Aligning Metal Land and Feed-Through Structure", IBM TDB, vol. 27, No. 7B, Dec. 1984, pp. 4159-4160.

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