Interconnect structure to reduce stress induced voiding effect

Details Interconnect structure to reduce stress induced voiding effect Interconnect structure to reduce stress induced voiding effect

2007-06-05

2007-06-05

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S758000, C257S773000, C438S619000

Reexamination Certificate

active

10984050

ABSTRACT:
An interconnect structure that may reduce or eliminate stress induced voids is provided. In an embodiment, a via is formed below a conductive line to provide an electrical connection to an underlying conductive region. The conductive line includes a widened region above the via. The widened region serves to reduce or eliminate stress induced voids between the via and the underlying conductive region. In another embodiment, one or more redundant lines are formed extending from a conductive region, such as a contact pad, such that the redundant line does not electrically couple the conductive region to an underlying conductive region. In a preferred embodiment, the redundant lines extend from a conductive region on a side adjacent to a side having a conductive line coupled to a via.

REFERENCES:
patent: 6054770 (2000-04-01), Toyoda et al.
patent: 6307268 (2001-10-01), Lin
patent: 6342733 (2002-01-01), Hu et al.
patent: 6368967 (2002-04-01), Besser
patent: 2002/0076903 (2002-06-01), Kondo et al.
Ogawa, et al., “Stress-Induced Voiding Under Vias Connected to Wide Cu Metal Leads,” 40th Annual International Reliability Physics Symposium (2002) pp. 312-321.

Affiliated with

Also associated with

Rating

Interconnect structure to reduce stress induced voiding effect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Interconnect structure to reduce stress induced voiding effect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interconnect structure to reduce stress induced voiding effect will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3812838