Interconnect structure for semiconductor devices

Details Interconnect structure for semiconductor devices Interconnect structure for semiconductor devices

2009-12-15

2010-11-16

Mulpuri, Savitri (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257SE23011, C257SE23142, C257SE23145, C257SE23169, C257SE23175, C438S584000, C438S585000, C438S623000, C438S634000, C438S637000, C438S641000, C438S653000

Reexamination Certificate

active

07834458

ABSTRACT:
A cap layer for a copper interconnect structure formed in a first dielectric layer is provided. In an embodiment, the cap layer may be formed by an in-situ deposition process in which a process gas comprising germanium, arsenic, tungsten, or gallium is introduced, thereby forming a copper-metal cap layer. In another embodiment, a copper-metal silicide cap is provided. In this embodiment, silane is introduced before, during, or after a process gas is introduced, the process gas comprising germanium, arsenic, tungsten, or gallium. Thereafter, an optional etch stop layer may be formed, and a second dielectric layer may be formed over the etch stop layer or the first dielectric layer.

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