Interconnect structure for integrated circuits having...

Computer-aided design and analysis of circuits and semiconductor – Integrated circuit design processing – Physical design processing

Reexamination Certificate

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C716S054000, C716S055000, C716S112000, C716S126000, C257S767000, C438S618000

Reexamination Certificate

active

08056039

ABSTRACT:
An interconnect structure for an integrated circuit (IC) device includes an elongated, electrically conductive line comprising one or more segments formed at a first width, w1, and one or more segments formed at one or more additional widths, w2. . . wN, with the first width being narrower than each of the one or more additional widths; wherein the relationship of the total length, L1, of the one or more conductive segments formed at the first width to the total lengths, L2. . . LN, of the one or more conductive segments formed at the one or more additional widths is selected such that, for a given magnitude of current carried by the conductive line, a critical length with respect to an electromigration short-length effect benefit is maintained such that a total length of the conductive line, L=L1+L2+ . . . +LN, meets a minimum desired design length regardless of the critical length.

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PCT/ISA/220 Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration, International Appl. No. PCT/US 09/44948 filed May 22, 2009.

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