Interconnect structure for an integrated circuit and method...

Details Interconnect structure for an integrated circuit and method... Interconnect structure for an integrated circuit and method...

2006-12-19

2006-12-19

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S625000, C438S637000

Reexamination Certificate

active

07151051

ABSTRACT:
An interconnect structure for an integrated circuit having several levels of conductors is disclosed. Dielectric pillars for mechanical support are formed between conductors in adjacent layers at locations that do not have vias. The pillars are particularly useful with low-k ILD or air dielectric.

REFERENCES:
patent: 5737259 (1998-04-01), Chang
patent: 5783864 (1998-07-01), Dawson et al.
patent: 5835396 (1998-11-01), Zhang
patent: 6653704 (2003-11-01), Gurney et al.
patent: 6713835 (2004-03-01), Horak et al.
patent: 7071545 (2006-07-01), Patel et al.
patent: 2002/0145201 (2002-10-01), Armbrust et al.

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