Interconnect structure for an integrated circuit

Details Interconnect structure for an integrated circuit Interconnect structure for an integrated circuit

1992-05-29

1994-05-17

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257384, 257754, 257757, H01L 29540

Patent

active

053130847

ABSTRACT:
A local interconnect structure for an integrated circuit is formed from a patterned refractory metal silicide. The local interconnect has an overlying oxide layer, which prevents part of the amorphous silicon used to form the interconnect from becoming silicided. This results in a local interconnect layer which has thinner silicide portions than silicide regions formed over adjacent source/drain regions and gate electrodes.

REFERENCES:
patent: 4822749 (1989-04-01), Flanner et al.
patent: 4977098 (1990-12-01), Yu et al.
patent: 5121186 (1992-06-01), Wong et al.
patent: 5173450 (1992-12-01), Wei

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