Interconnect structure and process of making the same

Details Interconnect structure and process of making the same Interconnect structure and process of making the same

2006-07-31

2009-02-10

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S637000, C257S750000, C257S751000

Reexamination Certificate

active

07488679

ABSTRACT:
A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first liner covering at least one of the one or more via openings; creating one or more trench openings on top of at least one of the one or more via openings covered by the first liner; and forming a second liner covering the trenching openings and at least part of the first liner. An interconnect structure formed by the method is also provided.

REFERENCES:
patent: 2004/0251552 (2004-12-01), Takewaki et al.
patent: 2005/0245068 (2005-11-01), Gambino et al.
patent: 2005/0263891 (2005-12-01), Lee et al.
patent: 2007/0049007 (2007-03-01), Yang et al.
patent: 2007/0202689 (2007-08-01), Choi et al.

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