Interconnect structure and method for forming the same

Details Interconnect structure and method for forming the same Interconnect structure and method for forming the same

2005-07-05

2005-07-05

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S790000, C438S624000, C427S487000, C427S503000

Reissue Patent

active

RE038753

ABSTRACT:
An interconnection structure includes an interlevel insulating film, made of organic-containing silicondelete-start id="DEL-S-00001" date="20050705" ?didelete-end id="DEL-S-00001" ?oxide, between lower- and upper-level metal interconnects. A phenyl group, bonded to a silicon atom, is introduced into silicondelete-start id="DEL-S-00002" date="20050705" ?didelete-end id="DEL-S-00002" ?oxide in the organic-containing silicondelete-start id="DEL-S-00003" date="20050705" ?didelete-end id="DEL-S-00003" ?oxide.

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