Interconnect, interconnect forming method, thin film...

Details Interconnect, interconnect forming method, thin film... Interconnect, interconnect forming method, thin film...

2006-11-21

2006-11-21

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000

Reexamination Certificate

active

07138715

ABSTRACT:
An interconnect forming method according to the present invention includes a step of forming a barrier film for metal diffusion on an insulator film, a step of selectively forming a metal seed layer on the barrier film for metal diffusion using an electroless plating process, a step of selectively forming a metal conductive layer on the metal seed layer using an electroplating process, and a step of etching the barrier film for metal diffusion using the metal conductive layer as a mask.

REFERENCES:
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6372114 (2002-04-01), Ito
patent: 6740591 (2004-05-01), Miller et al.
patent: 11-135504 (1999-05-01), None
patent: 11-238709 (1999-08-01), None
patent: 2001-189295 (2001-07-01), None

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