Interconnect dielectric tuning

Details Interconnect dielectric tuning Interconnect dielectric tuning

2006-07-25

2006-07-25

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000, C438S669000

Reexamination Certificate

active

07081406

ABSTRACT:
An improvement to a method of forming an integrated circuit. An etch stop layer is formed to overlie the front end processing layers of the integrated circuit. Support structures are formed that are disposed so as to support electrically conductive interconnects on various levels of the integrated circuit. Substantially all of the non electrically conductive layers above the etch stop layer that were formed during the fabrication of the interconnects are removed.

REFERENCES:
patent: 5559055 (1996-09-01), Chang et al.
patent: 6198170 (2001-03-01), Zhao

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