Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-15
2008-11-11
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S398000, C438S687000, C257S666000, C257S690000
Reexamination Certificate
active
07449412
ABSTRACT:
Methods of electroless plating metal on a dielectric material includes dipping the dielectric in a solution containing attractive catalytic metal particles and a metal salt solution. A thicker metallic layer can be deposited on top of the resulting layer by electroplating. Electrical circuits and multichip modules including such circuits can be formed having one or more dielectric layers comprised of latex and one or more layers of conductive leads, one or more dielectric layers comprised of a flexible dielectric material, and one or more layers of electrically conductive material patterned to interconnect such ICs. Frames that hold ICs against a substrate may be employed to planarize their top surfaces against the substrate, as well as standard photolithographic techniques in creating conductive paths on the dielectric material between the ICs.
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Kulinets Joseph M.
Nuytkens Peter R.
Popeko Ilya E.
Burns & Levinson LLP
Custom One Design, Inc.
Dang Phuc T
Erlich Jacob N.
Schepper Marlo M.
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