Interconnect capping layer and method of fabrication

Details Interconnect capping layer and method of fabrication Interconnect capping layer and method of fabrication

2006-12-22

2010-12-21

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S625000, C438S642000, C438S647000, C257S751000, C257S754000, C257SE23141, C257SE21495

Reexamination Certificate

active

07855143

ABSTRACT:
The present invention relates to an interconnect capping layer and a method of fabricating a capping layer for an interconnect. In particular, but not exclusively, the invention relates to a capping layer for a copper interconnect used to interconnect elements in an integrated circuit. Embodiments of the invention provide a method of fabricating a capping layer for an interconnect in an integrated circuit, comprising the steps of: forming an interconnect comprising upper and lower lateral surfaces; forming a lateral diffusion stop layer between said lateral surfaces; and forming a capping layer.

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