Interconnect alloys and methods and apparatus using same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S652000

Reexamination Certificate

active

11216488

ABSTRACT:
Integrated circuit interconnect alloys having copper, silver or gold as the major constituent element. The resulting reduction in melting temperature allows for improved coverage of high aspect ratio features with reduced deposition pressure. The alloys are used to fabricate interconnects in integrated circuits, such as memory devices. The interconnects can be high aspect ratio features formed using a dual damascene process. The integrated circuits having the interconnects are applicable to semiconductor dies, devices, modules and systems.

REFERENCES:
patent: 3986255 (1976-10-01), Mandal
patent: 4240845 (1980-12-01), Esch et al.
patent: 5130274 (1992-07-01), Harper et al.
patent: 5243222 (1993-09-01), Harper et al.
patent: 5677244 (1997-10-01), Venkatraman
patent: 5789317 (1998-08-01), Batra et al.
patent: 5920121 (1999-07-01), Forbes et al.
patent: 6037257 (2000-03-01), Chiang et al.
patent: 6063506 (2000-05-01), Andricacos et al.
patent: 6093265 (2000-07-01), Brenneman
patent: 6100176 (2000-08-01), Forbes et al.
patent: 6121126 (2000-09-01), Ahn et al.
patent: 6143655 (2000-11-01), Forbes et al.
patent: 6208016 (2001-03-01), Farrar
patent: 6211049 (2001-04-01), Farrar
patent: 6288442 (2001-09-01), Farrar
patent: 6300234 (2001-10-01), Flynn et al.
patent: 6316356 (2001-11-01), Farrar et al.
patent: 6376370 (2002-04-01), Farrar
patent: 6433431 (2002-08-01), Farrar
patent: 6444567 (2002-09-01), Besser et al.
patent: 6495919 (2002-12-01), Farrar
patent: 6504224 (2003-01-01), Ahn et al.
patent: 6541858 (2003-04-01), Farrar
patent: 6541859 (2003-04-01), Forbes et al.
patent: 6614099 (2003-09-01), Farrar
patent: 6649522 (2003-11-01), Farrar
patent: 6740392 (2004-05-01), Farrar
patent: 6774035 (2004-08-01), Farrar et al.
patent: 6784550 (2004-08-01), Farrar et al.
patent: 6800554 (2004-10-01), Marieb et al.
patent: 6818991 (2004-11-01), Kikuta
patent: 6849927 (2005-02-01), Farrar
patent: 2001/0010403 (2001-08-01), Farrar
patent: 2002/0020920 (2002-02-01), Farrar
patent: 2002/0076925 (2002-06-01), Marieb et al.
patent: 2003/0209775 (2003-11-01), Ahn
patent: 2004/0209456 (2004-10-01), Farrar
patent: 2004/0219788 (2004-11-01), Marieb et al.
patent: 2004/0224507 (2004-11-01), Marieb et al.
ASM Handbook, vol. 3, Alloy Phase Diagrams, (1992), Table of Contents.
American Society for Metals, “Metallography, Structures and Phase Diagrams”,Eighth Edition, vol. 8, Metals Park, Ohio : American Society for Metals,(1973).
American Society for Metals, “Metals Handbook”,Properties and Selection: Nonferrous Alloys and Pure Metals, Ninth Edition, vol. 2, American Society for Metals, Metals Park, Ohio(1979),673.
Elliott, R. P.,Constitution of Binary Alloys, First Supplement, (1985),2 pages.
Kaanta, C. , et al., “Dual Damascene: A ULSI Wiring Technology”,VMIC Conference, (Jun. 1991), 144-152.
Moffatt, W. G.,The Handbook of Binary Phase Diagrams, 2, Genium Publishing Corporation,(1984),p. 6/80.
Robinson, R. N., “Periodic Table of Elements”,Chemical Engineering Reference Manual, Appendix D,(1987),3 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Interconnect alloys and methods and apparatus using same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Interconnect alloys and methods and apparatus using same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interconnect alloys and methods and apparatus using same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3729995

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.