Interband quantum well cascade laser, with a blocking quantum we

Details Interband quantum well cascade laser, with a blocking quantum we Interband quantum well cascade laser, with a blocking quantum we

1996-11-01

1998-08-25

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, 257 97, 257 22, H01S 319

Patent

active

057990263

ABSTRACT:
A gain region for an interban quantum well laser incudes (a) an emitter ron of semiconductor material having at least one conduction subband and at least one valence subband, these subbands being spaced apart by an energy band-gap; (b) a collector region of semiconductor material having at least one conduction subband and at least one valence subband, these subbands spaced apart by an energy band-gap; (c) a type-I or type-II active region; and (d) a blocking quantum well region of semiconductor material between the active region and the collector region, for keeping electrons in the active region from tunnelling or scattering into the collector region, but allowing electrons in the highest valence subband in the active region to pass into the collector region. Another aspect of the invention is a cascade laser made from a stack of these gain regions, connected in series, optical cladding regions at opposing ends of the stack, and a voltage source for applying a bias voltage to the stack, and an optical cavity perpendicular to the stacking axis fabricated by cleaving or other means.

REFERENCES:
patent: 5079601 (1992-01-01), Esaki et al.
patent: 5416338 (1995-05-01), Suzuki et al.
patent: 5588015 (1996-12-01), Yang

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