Intentional asymmetry imposed during fabrication and/or access o

Details Intentional asymmetry imposed during fabrication and/or access o Intentional asymmetry imposed during fabrication and/or access o

1998-02-10

2000-08-15

Zarabian, A.

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365173, G11C 1114

Patent

active

061046337

ABSTRACT:
Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.

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Zheng, Y. & Zhu, J., "Micromagnetic Pinciples in Pseudo Spin Valve Memory Element Design," IEEE Transactions on Magnetics, vol. 33, No. 5, (Sep. 1997), pp. 3286-3288.

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