Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1985-11-27
1988-08-09
Hecker, Stuart N.
Static information storage and retrieval
Read/write circuit
Bad bit
365218, 365201, G11C 1134, G11C 2900
Patent
active
047633050
ABSTRACT:
A memory provides a byte program mode which avoids unnecessary erase and program cycles. If a byte is to be programmed, the new data to be written is first compared to the existing data in the byte. If the old data is the same as the new data, there is no need to do a conventional erase/program cycle. In such case the memory does not perform the erase and reprogram which saves much time and avoids decreasing the life of the floating gate transistors in the byte. Even if the old data is not the same as the new data, the byte may already be in the erased state. In such case the erase cycle is skipped and programming is begun.
REFERENCES:
patent: 4203158 (1980-05-01), Frohmann-Bentchkowsky et al.
patent: 4266283 (1981-05-01), Perlegos et al.
patent: 4366555 (1982-12-01), Hu
patent: 4460982 (1984-07-01), Gee et al.
patent: 4489404 (1984-12-01), Yasuoka
patent: 4578751 (1986-03-01), Erwin
Gee et al., "An Enhanced 16K EEPROM", IEEE Journal of Solid State Circuits, vol. SC-17, No. 5, Oct. 1982, pp. 828-832.
Bowler Alyssa H.
Clingan Jr. James L.
Fisher John A.
Hecker Stuart N.
Motorola Inc.
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