Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-27
2006-06-27
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S378000
Reexamination Certificate
active
07067879
ABSTRACT:
The formation of vertical trench DMOS devices can be added to existing integrated BCD process flows in order to improve the efficiency of the BCD devices. The formation of this trench DMOS varies from existing approaches used with discrete trench DMOS devices, in that only two extra mask steps are added to the existing BCD process, instead of the 10 or so mask steps used in existing discrete trench DMOS processes. Further, the location of these additional heat cycles in the BCD process steps can be placed so as to have minimal impact on the other components created in the process. Utilizing an integrated trench device in a BCD process can offer at least a factor-of-two RDS(ON)area advantage over a planar counterpart.
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R. K. Williams et al., “A 20-V P-channel with 650 μΩ—cm2at VGS=2.7 V: Overcoming FPI Breakdown in High-Channel-Conductance Low—Vt TrenchFETs,”Proceedings of 1998 International Symposium on Power Semiconductor Devices&ICs, Kyoto, (1998), pp. 411-414.
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Bulucea Constantin
Dyer Terry
McGinty Jim
Strachan Andrew
National Semiconductor Corporation
Stallman & Pollock LLP
Wojciechowicz Edward
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