Integration of silicon boron nitride in high voltage and...

Details Integration of silicon boron nitride in high voltage and... Integration of silicon boron nitride in high voltage and...

2007-08-31

2009-12-15

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S649000, C257SE21266, C257SE23167, C438S783000

Reexamination Certificate

active

07633125

ABSTRACT:
Integration of silicon boron nitride in high voltage semiconductors is generally described. In one example, a microelectronic apparatus includes a semiconductor substrate upon which transistors of an integrated circuit are formed, a plurality of transistor gates formed upon the semiconductor substrate, a gate spacer dielectric disposed between the gates, and a contact etch stop dielectric disposed upon the gates and gate spacer dielectric, the contact etch stop dielectric comprising silicon boron nitride (SiBN) to reduce breakdown of the contact etch stop dielectric in high voltage applications.

REFERENCES:
patent: 6066555 (2000-05-01), Nulty et al.
patent: 2008/0081406 (2008-04-01), Choo et al.
patent: 2008/0293207 (2008-11-01), Koutny et al.

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