Integration of sense FET into discrete power MOSFET

Details Integration of sense FET into discrete power MOSFET Integration of sense FET into discrete power MOSFET

2011-05-10

2011-05-10

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S212000

Reexamination Certificate

active

07939882

ABSTRACT:
A semiconductor device includes a main field effect transistor (FET) and one or more sense FETs. A transistor portion of the sense FET is surrounded by transistors of the main FET. An electrical isolation structure that surrounds the main FET is configured to electrically isolate source and body regions of the main FET from source and body regions of the sense FET. A sense FET source pad is located at an edge of the main FET and spaced apart from the transistor portion of the sense FET. The sense FET source pad is connected to the transistor portion of the sense FET by a sense FET probe metal. The isolation structure is configured such that the transistor portion of the sense FET and the sense FET source pad are located outside an active area of the main FET.

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