Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-03-04
2008-03-04
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S653000, C438S687000
Reexamination Certificate
active
07338893
ABSTRACT:
A device employs damascene layers with a pore sealing liner and includes a semiconductor body. A metal interconnect layer comprising a metal interconnect is formed over the semiconductor body. A dielectric layer is formed over the metal interconnect layer. A conductive trench feature and a conductive via feature are formed in the dielectric layer. A pore sealing liner is formed only along sidewall of the conductive via feature and along sidewalls and bottom surfaces of the conductive trench feature. The pore sealing liner is not substantially present along a bottom surface of the conductive via feature.
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Ajmera Sameer Kumar
Engbrecht Edward Raymond
Grunow Stephan
Papa Rao Satyavolu Srinivas
Brady III W. James
Picardat Kevin M.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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