Integration of high value capacitor with ferroelectric memory

Details Integration of high value capacitor with ferroelectric memory Integration of high value capacitor with ferroelectric memory

1995-09-08

1997-03-04

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257298, 257310, 257532, 257535, 257679, 437919, 361303, 361330, 235492, 902 26, H01L 2994

Patent

active

056082460

ABSTRACT:
An integrated circuit capacitor and method for making the same utilizes a ferroelectric dielectric, such as lead-zirconate-titanate ("PZT"), to produce a high value peripheral capacitor for integration on a common substrate with a ferroelectric memory array also utilizing ferroelectric memory cell capacitors as non-volatile storage elements. The peripheral capacitor is linearly operated in a single direction and may be readily integrated to provide capacitance values on the order of 1-10 nF or more utilizing the same processing steps as are utilized to produce the alternately polarizable memory cell capacitors. The high value peripheral capacitor has application, for example, as a filter capacitor associated with the on-board power supply of a passive radio frequency ("RF") identification ("ID") transponder.

REFERENCES:
patent: 3935083 (1976-01-01), Tomozawa et al.
patent: 4707897 (1987-11-01), Rohrer et al.
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4853893 (1989-08-01), Eaton, Jr. et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4893272 (1990-01-01), Eaton, Jr. et al.
patent: 5005102 (1991-04-01), Larson
patent: 5024964 (1991-06-01), Rohrer et al.
patent: 5031144 (1991-07-01), Persky
patent: 5075817 (1991-12-01), Butler
patent: 5109357 (1992-04-01), Eaton, Jr.
patent: 5142437 (1992-08-01), Kammerdiner et al.
patent: 5162890 (1992-11-01), Butler
patent: 5166545 (1992-11-01), Harrington
patent: 5191510 (1993-03-01), Huffman
patent: 5206788 (1993-04-01), Larson et al.
patent: 5216572 (1993-06-01), Larson et al.
patent: 5266821 (1993-11-01), Chern et al.
patent: 5338951 (1994-08-01), Argos, Jr. et al.
patent: 5350705 (1994-09-01), Brassington et al.
Liu et al, "Low-Temperature Fabrication of Amorphous BaTiO.sub.3 Thin-Film Bypass Capacitors," IEEE Electron Device Letters, vol. 14 No. 7, 1993, pp. 320-322.
Ramtron International corporation, Ramtron Brochure, Fram.RTM. Technology, R7 020993, 1993.
Ramtron Corporation, R2 92490, Ramtron Brochure, RTx 0801 Ramtag.TM., 256-Bit Passive Nonvolatile RF/ID Tag Engineering Prototype, 1990, pp. 1-6.
Ramtron International Corporation, Ramtron Brochure, FM1208S FRAM.RTM. Memory, 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification, R3 Aug., 1993, pp. 1-8.

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