Integrating nonvolatile memory capability within SRAM devices

Details Integrating nonvolatile memory capability within SRAM devices Integrating nonvolatile memory capability within SRAM devices

2011-05-17

2011-05-17

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S185080, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

07944734

ABSTRACT:
A nonvolatile static random access memory (SRAM) device includes a pair of cross-coupled, complementary metal oxide semiconductor (CMOS) inverters configured as a storage cell for a bit of data and a pair of magnetic spin transfer devices coupled to opposing sides of the storage cell. The magnetic spin transfer devices are configured to retain the storage cell data therein following removal of power to the SRAM device, and are further configured to initialize the storage cell with the retained data upon application of power to the SRAM device.

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