Integrating multiple thin film resistors

Details Integrating multiple thin film resistors Integrating multiple thin film resistors

2005-02-15

2005-02-15

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S330000, C438S697000, C438S700000

Reexamination Certificate

active

06855585

ABSTRACT:
A method for forming multiple resistors on a substrate. The method initially includes providing a first resistor on the substrate. A first dielectric layer is deposited, patterned, and selectively etched over the first resistor. Second resistor material is provided over the first dielectric layer. Furthermore, landing pad material is provided over the second resistor material. The landing pad material and the second resistor material are then selectively etched. The selective etching forms contacts for the first resistor in a first region, and forms a second resistor and associated contacts in a second region.

REFERENCES:
patent: 6365498 (2002-04-01), Chu et al.
patent: 6678127 (2004-01-01), Hsiao et al.

Affiliated with

Also associated with

Rating

Integrating multiple thin film resistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrating multiple thin film resistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrating multiple thin film resistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3489920