Integrating imaging system with phototransistor having wide dyna

Details Integrating imaging system with phototransistor having wide dyna Integrating imaging system with phototransistor having wide dyna

1996-11-08

1998-06-09

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257292, 257443, 257446, 257462, H01L 3100

Patent

active

057639094

ABSTRACT:
A bipolar phototransistor comprises both an Integrating photosensor and a switching element. The base terminal of the bipolar phototransistor is utilized as the switch-control node for the pixel and its emitter is the output node of the integrating photosensor. A plurality of integrating photosensors may be placed in an array of rows and columns, wherein the bases of all bipolar phototransistors in a row are capacitively coupled together to a common row-select line, and the emitters of all bipolar phototransistors in a column are connected together to a column sense line. The input of a sense amplifier is connected to the sense line of each column of integrating photosensors. An integrating sense amplifier according to the present invention includes an amplifying element having an inverting input connected to the sense line. A capacitor, preferably a varactor, is also connected between the inverting input and output of the amplifying element. An exponential feedback element may be provided in the sense amplifiers for signal compression at high light levels. The outputs of the sense amplifiers are connected to sample/hold circuits. The rows of the array are selected one at a time and the outputs of the sample/hold circuits for each row are scanned out of the array while the pixel data for the next row are sampled.

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