Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-05
2009-12-29
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S348000, C257S401000, C257S368000
Reexamination Certificate
active
07638843
ABSTRACT:
A semiconductor device comprises a first multi-gate device and a second multi-gate device on a semiconductor substrate. The first multi-gate device comprises a first gate structure and the second multi-gate device comprises a second gate structure. An effective width of the first gate structure is greater than an effective width of the second gate structure.
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Cleavelin Cloves Rinn
Xiong Weize W.
Brady III Wade J.
Franz Warren L.
Luu Chuong A.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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