Integrated zener-zap nonvolatile memory cell with programming an

Details Integrated zener-zap nonvolatile memory cell with programming an Integrated zener-zap nonvolatile memory cell with programming an

1995-04-14

1996-11-05

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Testing

365105, 365175, 365177, G11C 2900

Patent

active

055724728

ABSTRACT:
A "zener-zap" memory cell with pretest capability for testing effects that would be realized from permanently programming the memory cell is provided. The memory cell is addressable and provides a binary signal at an output. The memory cell uses a zener diode as a memory element which is permanently programmed when selectively coupled to a programming voltage which exceeds the reverse breakdown voltage of the zener diode. The memory cell has a test circuit for generating the programmed binary signal at the output of the memory cell prior to permanently programming the zener diode and when coupled to a pretest voltage.

REFERENCES:
patent: 4819212 (1989-04-01), Nakai et al.
patent: 5109257 (1992-04-01), Kondo
patent: 5224070 (1993-06-01), Fandrich et al.

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