Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-16
1998-06-16
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257409, 257488, H01L 2362
Patent
active
057675503
ABSTRACT:
In one embodiment, modifications to the polysilicon gate, body, source, and contact masks of a DMOS process add a source-body monocrystalline gate protection diode under the gate pad by implanting an anode region beneath the gate. The anode is connected to the gate through the gate metal in the pad. In addition to the gate-source diode, there is also a connection from the drain to the gate through the anode formed by the body region beneath the gate. This embodiment includes a junction terminating field plate. The presence of the field plate creates a special protection device similar to a zener diode, but which exhibits a current/voltage characteristic similar to a thyristor. A significant feature of this embodiment is that the zener breakdown voltage is easily adjusted by a simple modification to the fabrication process. The field plate creates two opposing junctions with the spacing determined by the length of the field plate. The concentration gradients under the field plate, and hence the breakdown voltage, is controlled by suitable length of the field plate and other processing conditions. A zener breakdown programmability option is implemented so that the zener breakdown voltage is varied by suitable process selection using only one additional implant, temperature cycle, and photolithographic mask. The zener diode gate protection structure formed using the field plate has a high current per unit power; therefore, a much smaller protection structure can be implemented compared to the prior art, because much more current is conducted for a given size structure.
REFERENCES:
patent: 4437107 (1984-03-01), Jonsson et al.
patent: 4798810 (1989-01-01), Blanchard et al.
patent: 4892836 (1990-01-01), Andreini et al.
patent: 4904614 (1990-02-01), Fisher et al.
patent: 4990976 (1991-02-01), Hattori
patent: 5077590 (1991-12-01), Fujihara
patent: 5204988 (1993-04-01), Sakurai
patent: 5324971 (1994-06-01), Notley
patent: 5418383 (1995-05-01), Takagi et al.
patent: 5432371 (1995-07-01), Denner et al.
patent: 5468984 (1995-11-01), Efland et al.
patent: 5514608 (1996-05-01), Williams et al.
patent: 5536958 (1996-07-01), Shen et al.
patent: 5557127 (1996-09-01), Ajit et al.
patent: 5561313 (1996-10-01), Saitoh et al.
patent: 5610425 (1997-03-01), Quigley et al.
patent: 5612564 (1997-03-01), Fujishima et al.
IBM Technical Disclosure Bulletin, vol. 19, No. 5, Oct. 1976, PP. 1782-1783.
Stephen P. Robb, Judith L. Sutor and Lewis E. Terry, "SMARTDISCRETES.TM., New Products For Automotive Applications", 1989 IEEE, pp. 109-113.
H.C. De Graaff and M. Huybers, "Grain Boundary States and the Characteristics of Lateral Polysilicon Diodes", Solid State Electronics, vol. 25, No. 1, pp. 67-71, 1982.
Bencuya Izak
Calafut Daniel
Sapp Steven
Hardy David B.
National Semiconductor Corporation
Thomas Tom
LandOfFree
Integrated zener diode overvoltage protection structures in powe does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated zener diode overvoltage protection structures in powe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated zener diode overvoltage protection structures in powe will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1729100