Integrated vertical bipolar and vertical MOSFET transistors

Details Integrated vertical bipolar and vertical MOSFET transistors Integrated vertical bipolar and vertical MOSFET transistors

1994-06-09

1996-06-11

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257567, 257500, H01L 2976, H01L 27082, H01L 2900

Patent

active

055258263

ABSTRACT:
An integrated structure is described, that comprises a vertical bipolar transistor and a vertical MOSFET transistor, where, in order to reduce the series resistance of the MOSFET transistor, the collector region of the bipolar transistor and the drain region of the MOSFET transistor are both parts of a common zone and are contiguous each other, so that the high charge injection in the collector region when the bipolar transistor is in conduction state, causes a simultaneous increase in the conductivity of the drain region of the MOSFET transistor.
Both transistors are formed by cells each containing an elementary bipolar transistor and an elementary MOSFET transistor.

REFERENCES:
patent: 4080619 (1978-03-01), Suzuki
patent: 4402003 (1983-08-01), Blanchard
patent: 4672416 (1987-06-01), Nakazato et al.
patent: 4811074 (1989-03-01), Herberg

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