Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device
Reexamination Certificate
2006-03-28
2006-03-28
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
Reexamination Certificate
active
07019384
ABSTRACT:
An integrated, tunable capacitance device includes a semiconductor region, which is, preferably, N-doped, formed in a semiconductor body, having an insulating thick oxide region, which areally adjoins the main side of the semiconductor body, and having a thin oxide region, which, likewise, adjoins the main side and is disposed above the semiconductor region and also has a smaller layer thickness than the thick oxide region. A gate electrode is provided on the thin oxide region and terminal regions are provided in the semiconductor region. The capacitance described has a larger tuning range compared with transistor varactors. The integrated, tunable capacitance can be used, for example, in LC oscillators of integrated VCOs.
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Maget Judith
Tiebout Marc
Dolan Jennifer M.
Greenberg Laurence A.
Infineon - Technologies AG
Jr. Carl Whitehead
Locher Ralph E.
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