Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-06
2005-09-06
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S380000
Reexamination Certificate
active
06940133
ABSTRACT:
An integrated circuit trim structure includes a dopant source, a target trim element formed in proximity to the dopant source, and a conductive heating element. The heater element is formed in proximity to the dopant source and includes first and second terminals and a trapezoid shaped region formed between the first and second terminals. As predefined current pulse is applied to the first terminal to promote current flow between the first and second terminals, a local heat source is created at a predefined location within the trapezoid shaped region and in proximity to the dopant source such that dopant flows from the dopant source into the target trim element to change the conductive characteristics of the target trim element.
REFERENCES:
patent: 5293058 (1994-03-01), Tsividis
patent: 5391906 (1995-02-01), Natsume
patent: 2004/0239477 (2004-12-01), Landsberger et al.
Drury Robert
Hopper Peter J.
Lindorfer Philipp
Vashchenko Vladislav
Cao Phat X.
Doan Theresa T.
National Semiconductor Corporation
Stallman & Pollock LLP
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