Integrated trench MOSFET and Schottky rectifier with trench...

Details Integrated trench MOSFET and Schottky rectifier with trench... Integrated trench MOSFET and Schottky rectifier with trench...

2008-06-23

2010-10-19

Stark, Jarrett J (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27081

Reexamination Certificate

active

07816732

ABSTRACT:
A trench MOSFET in parallel with trench Schottky barrier rectifier is formed on a single substrate. The present invention solves the constrains brought by planar contact of Schottky, for example, the large area occupied by planar structure. As the size of present device is getting smaller and smaller, the trench Schottky structure of this invention is able to be shrink and, at the same time, to achieve low specific on-resistance. By applying a double epitaxial layer in trench Schottky barrier rectifier, the device performance is enhanced for lower Vf and lower reverse leakage current Ir is achieved.

REFERENCES:
patent: 2003/0040144 (2003-02-01), Blanchard et al.
patent: 2005/0029585 (2005-02-01), He et al.
patent: 2006/0125040 (2006-06-01), Levin et al.
patent: 2006/0170036 (2006-08-01), Yilmaz
patent: 2008/0246082 (2008-10-01), Hshieh

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