Integrated trench MOSFET and junction barrier schottky...

Details Integrated trench MOSFET and junction barrier schottky... Integrated trench MOSFET and junction barrier schottky...

2008-06-23

2009-12-01

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S332000

Reexamination Certificate

active

07626231

ABSTRACT:
A trench MOSFET in parallel with trench junction barrier Schottky rectifier with trench contact structures is formed in single chip. The present invention solves the drawback brought by some prior arts, for example, the large area occupied by planar contact structure and high gate-source capacitance. As the electronic devices become more miniaturized, the trench contact structures of this invention are able to be shrunk to achieve low specific on-resistance of Trench MOSFET, and low Vf and reverse leakage current of the Schottky Rectifier.

REFERENCES:
patent: 2008/0242029 (2008-10-01), Wu et al.
patent: 2009/0008706 (2009-01-01), Yedinak et al.
patent: 2009/0072301 (2009-03-01), Bhalla et al.

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