Integrated transistor module and method of fabricating same

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support

Reexamination Certificate

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C257SE21510, C257SE21705

Reexamination Certificate

active

07842555

ABSTRACT:
An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead frame mechanically and electrically interconnects the low-side and high-side lands. A low-side transistor is mounted upon the low-side land with its drain electrically connected to the low-side land. A high-side transistor is mounted upon the high-side land with its source electrically connected to the high-side land.

REFERENCES:
patent: 5703399 (1997-12-01), Majumdar et al.
patent: 6710441 (2004-03-01), Eden et al.
patent: 6841869 (2005-01-01), Triantafyllou et al.
patent: 6894397 (2005-05-01), Pavier et al.
patent: 6919644 (2005-07-01), Uchida
patent: 7061102 (2006-06-01), Eghan et al.
patent: 7501702 (2009-03-01), Joshi et al.
patent: 2003/0011005 (2003-01-01), Joshi
patent: 2004/0061221 (2004-04-01), Schaffer
patent: 2005/0285238 (2005-12-01), Joshi et al.

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