Integrated thermoelectric cooler formed on the backside of a sub

Details Integrated thermoelectric cooler formed on the backside of a sub Integrated thermoelectric cooler formed on the backside of a sub

1997-10-24

1999-09-21

Booth, Richard

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

438 54, 438 55, 438612, 438928, 136200, 136201, 136203, 136204, 136225, 136228, 136293, 361718, H01L 2100

Patent

active

059565691

ABSTRACT:
The present invention provides a structure and a method of fabricating a thermoelectric Cooler directly on the backside of a semiconductor substrate. The thermoelectric (TE) cooler (thermoelectric cooler) disperses heat from an integrated circuit (IC) that is formed on the front-side of the silicon substrate. Spaced first bonding pad holes 28 are formed in the backside of a substrate that expose bonding pads 24. Second holes 32 are formed between the spaced first bonding pad holes 28. A first insulating layer 34 is formed over the backside of the substrate, but not over the bonding pad 24. A metal layer is formed lining the first bonding pad holes 28. A polysilicon layer 46 is formed over the surface of the backside of the substrate in the second holes. The polysilicon layer is implanted thereby forming alternating adjacent N and P doped sections 46p 46n in the second holes. The adjacent N and P doped polysilicon sections 46n 46p are electrically connected to the bonding pads 24 by the metal layer 38.

REFERENCES:
patent: 4211888 (1980-07-01), Stein et al.
patent: 5393351 (1995-02-01), Kinard et al.
patent: 5837929 (1998-11-01), Adelman

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