Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-07-22
1998-12-08
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257630, H01L 2976
Patent
active
058474331
ABSTRACT:
In an integrated switching circuit with a CMOS circuit and a method for producing isolated active regions of the CMOS circuit, a field plate is doped jointly with wells located beneath it, so that the field plate includes an n-doped region and a p-doped region, and a boundary layer forms in a transition region. Upon electrical connection of the field plate regions with the particular well located beneath them, a flat band condition prevails at a substrate surface.
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patent: 4688063 (1987-08-01), Lu et al.
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patent: 5097310 (1992-03-01), Eimori et al.
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patent: 5181094 (1993-01-01), Eimori et al.
patent: 5463238 (1995-10-01), Takahashi et al.
IEDM 93, pp. 475-478, "CAD-Compatible High-Speed CMOS/SIMOX Technology Using Field-Shield Isolation for 1M Gate Array" (Jwamatsu et al).
IEEE Transactions on Electron Devices, vol. 36, No. 4, Apr. 1989, pp. 651-657; (Manchanda et al.) "A High-Performance Directory Insertable Self-. . . Gigaherttz Silicon NOMS/COMS VLSI".
Crane Sara W.
Greenberg Laurence A.
Lerner Herbert L.
Siemens Aktiengesellschaft
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