Integrated structure with transistors and Schottky diodes...

Details Integrated structure with transistors and Schottky diodes... Integrated structure with transistors and Schottky diodes...

2011-08-02

2011-08-02

Luu, Chuong A (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S172000, C257SE21047

Reexamination Certificate

active

07989277

ABSTRACT:
A process for fabricating an integrated group III nitride structure comprising high electron mobility transistors (HEMTs) and Schottky diodes, and the resulting structure, are disclosed. Integration of vertical junction Schottky diodes is enabled, and the parasitic capacitance and resistance as well as the physical size of the diode are minimized. A process for fabricating an integrated group III nitride structure comprising double-heterostructure field effect transistors (DHFETs) and Schottky diodes and the resulting structure are also disclosed.

REFERENCES:
patent: 7098490 (2006-08-01), Micovic et al.
patent: 2003/0116782 (2003-06-01), Mizutani
patent: 2003/0235974 (2003-12-01), Martinez et al.
patent: 2010/0159664 (2010-06-01), Gluschenkov et al.
Dang, G., et al., “High voltage GaN Schottky Rectifiers,” IEEE Trans. On Electronic Devices, vol. 47, No. 4, Apr. 2000.

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