Integrated structure protection device for protecting logic-leve

Details Integrated structure protection device for protecting logic-leve Integrated structure protection device for protecting logic-leve

1994-04-08

1995-06-20

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257337, 257341, 257361, 257362, H01L 2906, H01L 2978, H01L 2910

Patent

active

054263204

ABSTRACT:
An integrated structure protection device suitable for protecting a power MOS device from electrostatic discharges comprises a junction diode comprising a first electrode made of a highly doped region of a first conductivity type surrounded by a body region of a second conductivity type and representing a second electrode of the junction diode, which in turn is surrounded by a highly doped deep body region of said second conductivity type. The highly doped region is connected to a polysilicon gate layer representing the gate of the power MOS device, while the deep body region is connected to a source region of the power MOS.

REFERENCES:
patent: 3999212 (1976-12-01), Usuda
patent: 4072975 (1978-02-01), Ishitani
patent: 4890143 (1989-12-01), Baliga et al.
patent: 4963970 (1990-10-01), Throngnumchai et al.
patent: 5045902 (1991-09-01), Bancal

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