Integrated structure effective to form a MOS component in a...

Details Integrated structure effective to form a MOS component in a... Integrated structure effective to form a MOS component in a...

2005-05-31

2005-05-31

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000

Reexamination Certificate

active

06900504

ABSTRACT:
The integrated structure and process is effective to form, in a dielectrically insulated well, a MOS component including respective drain and source regions of a first conductivity type as well as a gate region. The integrated structure includes a cut-off layer of the second conductivity type effective to surround only the source region. The cut-off layer is self-aligned by the gate region.

REFERENCES:
patent: 6268630 (2001-07-01), Schwank et al.
patent: 6455902 (2002-09-01), Voldman
patent: 6657257 (2003-12-01), Ohyanagi et al.

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