Integrated semiconductor structure for SRAM cells

Details Integrated semiconductor structure for SRAM cells Integrated semiconductor structure for SRAM cells

2005-10-25

2009-02-03

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000, C257S413000, C257S903000, C257SE27098

Reexamination Certificate

active

07485934

ABSTRACT:
A semiconductor structure includes a semiconductor substrate having a first device area and a second device area. A gate layer is formed across the first device area and the second device area on the semiconductor substrate, wherein a first portion of the gate layer running across the first device area is doped with impurities of a type different from that of a second portion of the gate layer running across the second device area. A cap layer is formed on the gate layer for protecting the same covered thereunder from forming a silicide structure, having at least one opening at a junction of the first and second portions of the gate layer. A silicide layer is formed on the gate layer that is exposed by the opening for reducing resistance at the junction between the first and second portions.

REFERENCES:
patent: 6198143 (2001-03-01), Ohsaki
patent: 6583518 (2003-06-01), Trivedi et al.
patent: 6700163 (2004-03-01), Breitwisch et al.
patent: 6841429 (2005-01-01), Matsuda et al.
patent: 2002/0028569 (2002-03-01), Igarashi et al.

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